Primary Research Area:

Nanoelectronics and Photonics including Optical Materials and Devices

Research Interests:

Nanoelectronics and photonics, including optical materials and photonic devices.

Education:

Ph.D., North Carolina State

About Dr. John F Muth:

The goal: Grow novel semiconductor materials, characterize their optical and eletrical properties, and fabricate novel optoelectronic devices. Sucessful intergration of these tasks will create enabling photonic technologies. This lab works with wide band gap semiconductors includling Gallium Nitride and Zinc Oxide and a variety materials to make quantum dots and other nanostructures.

Recent Publications:

1. "Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers," M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everit, J. F. Muth, Appl. Phys. Lett. 75, 67 (1999).
2. "Optical and structural properties of epitaxial MgxZn1-xO alloys," A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, C. Jin, A.Kvit, R.M. Kolbas, and O.W. Holland, Appl. Phys. Lett. 75, 3327 (1999).
3. "Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in an Al2O3 or AlN matrix," C.W. Teng, J.F. Muth, R.M. Kolbas, K.M. Hassan, A.K. Sharma, A.Kvit, and J. Narayan, Appl. Phys. Lett. 76, 43, (2000).
4. "Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition," J. F. Muth, R. M. Kolbas, A. K. Sharma, S. Oktyabrsky, and J. Narayan, J. Appl. Phys. 85, 7884, (1999).
5. "Absorption Coefficient, energy gap, exciton binding energy and recombination lifetime of GaN obtained from transmission measurements," J. F. Muth, J.H. Lee, I.K. Shmagin, R. M. Kolbas, H. C. Casey Jr., B. P. Keller, U.K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 71, 2572 (1997).

Date of Last Modification: 2/17/2005

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